New dielectric materials and insulators for microelectronic applications

Ceramics International

Volumn 22, Issue 5, 1996, Pages 435-442

  Treichel, H ^a   Eckstein, E ^b   Kern, W ^c  

^a Fraunhofer Institut fur Festkorpertechnologie   (Germany)

^b SIEMENS AG   (Germany)

^c Werner Kern Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATING MATERIALS; GLASS; MICROELECTRONICS; PERMITTIVITY; PHOTOLITHOGRAPHY; POLISHING; SILICA; SILICON NITRIDE; ULSI CIRCUITS;

METAL PITCHES; MULTILEVEL INTERCONNECT SYSTEMS; PLANARIZATION;

DIELECTRIC MATERIALS;

EID: 0029713759     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/0272-8842(95)00103-4     Document Type: Review

References (36)

1. TREICHEL, H., MITWALSKY, A., SANDLER, N. P., TRIBULA, D., KERN, W. & LANE, A. P., Adv. Mat. for Optics and Electronics, 1 (1992) 299.
2. HIEBER, K., KÖRNER, H. & TREICHEL, H., Thin Solid Films, 181 (1989) 75.
3. BECKER, F. S., TREICHEL, H., RÖHL, S. & PAWLIK, D., Abstract number 366, ECS Ext. Abstr., 86-2 (1986) 396.
4. BECKER, F. S., TREICHEL, H. & RÖHL, S., J. Electrochem. Soc., 136 (1989) 3033.
5. BECKER, F. S. & TREICHEL, H., In Proc. 6th European Conf. on CVD, ed. R. Porat. Israel, 1987, p. 207.
6. BECKER, F. S. & RÖHL, S., J. Electrochem. Soc., 134 (1987) 2923.
7. TREICHEL, H., TOMKEWITSCH, J. V. & SPINDLER, O., In Plasma Processing of Materials, ed. J. J. Pouch & S. A. Alterovitz. Mater. Sci. Forum, Trans. Tech. Publ., Switzerland, 1993, p. 359.
8. TREICHEL, H., BRAUN, R., GABRIC, Z., SPINDLER, O. & GSCHWANDTNER, A., J. de Physique II, 1 (1991) 839.
9. TREICHEL, H., SPINDLER, O., BRAUN, R., BROOKS, T. A. & NOWAK, R., In Proc. 8th Symp. on Plasma Processing, ed. G. S. Mathad & D. W Hess. The Electrochemical Soc. Inc., Pennington, NJ, 1990, PV 90-14, p 574.
10. BECKER, F. S., PAWLIK, D., SCHÄFER, H. & STAUDIGL, G., J. Vac. Sci Technol., B4 (1986) 832.
11. CHU, T. L., J. Vac. Sci. Technol., 6 (1969) 25.
12. BANERJEE, S., SHEN, B., CHEN, I., BOHLMAN, J., BROWN, G. & DOERING, A., J. Appl. Phys., G5(3) (1989) 1140.
13. NGUYEN, S. V., NGUYEN, T., TREICHEL, H. & SPINDLER, O., In Proc. of the 11th Int. Symp. on Plasma Chem., ed. J. Harry, 3 (1993) 981.
14. MÜHLHOFF, H. M. & McCAUGHAN, D. V., In Handbook on Semiconductors, Device Physics, Vol. 4, Chap. 3, ed. T. S. Moss & C. Hilsum. Elsevier Science Publishers, 1993.
15. MAEDA, M., MAKINO, T., YAMAMOTO, E. & KONAKA, S., IEEE Trans. Electr. Dev., 36 (1989) 1610.
16. HARROP, P. J. & CAMPBELL, D. S., Thin Solid Films, 2 (1968) 273.
17. KERN, W., Tutorial Booklet, 10th VMIC Conf., Santa Clara, CA, 1993.
18. TREICHEL, H., MITWALSKY, A., SANDLER, N. P., TRIBULA, D., KERN, W. & LANE, A. P., In Korean Technical Trade Mission , Semicon, Korea, 1992.
19. TREICHEL, H., MITWALSKY, A., ZORN, G., TEMPEL, G., KERN, W., SANDLER, N. P. & LANE, A. P., MRS Symp. Proc., 282 (1992) 557.
20. TREICHEL, H., MITWALSKY, A., TEMPEL, G., ZORN, G., BOHLING, D. A., COYLE, K. R., FELKER, B. S., GEORGE, M., KERN, W., LANE, A. P. & SANDLER, N. P., Abstract number 156, ECS Ext. Abstr., 93-2 (1993) 250.
21. STAMPER, A. K., McDEVITT, T. L., PENNINGTON, S. L., LUCE, S. F. & SOTO, A. B, In Proc. 10th VMIC Conf., Santa Clara, USA. IEEE, 1993, p. 160.
22. JENSEN, K. F. & KERN, W., In Thin Film Processes II, ed. J. L. Vossen & W. Kern, Chap. III-1. Academic Press, New York, 1991, p. 283.
23. SPINDLER, O. & NEUREITHER, B., Thin Solid Films, 175 (1989) 67.
24. CARRANO, J. C., SUDHAMA, J. H., TASCH, A. F. & MILLER, W., IEDM Tech. Digest, (1989) 225.
25. MOAZZAMI, R., HU, C. & SHEPHERD, W. H., IEDM Tech. Digest, (1990) 417.
26. ITOH, H., KASHIHARA, K., OKUDAIRA, T., TAKAMOTO, K. & AKASAKA, Y., IEDM Tech. Digest, (1991) 477.
27. KOYAMA, K., SAKUMA, T., YAMAMICHI, S., WATANABE, H., AOKI, H., OKYA, S., MIYASAKA, Y. & KIKKAWA, T., IEDM Tech. Digest, (1991) 823.
28. HOMMA, T. & MURAO, Y., IEDM Tech. Digest, (1991) 289.
29. POON, S., GELATOS, A., PEERERA, A. H. & HOFMANN, M., 1993 VLSI Techn. Symp., Ext. Abstract no. 8, B-5, 1993, p. 115.
30. UTTECHT, R. R. & GEFFKEN, R. M., In Proc. 9th VMIC Conf., Santa Clara, USA. IEEE, 1991, p. 20.
31. NGUYEN, S. V., DOBUZINSKY, D. & HARMON, D., Solid State Technol., 10 (1990) 73.
32. TAKEMAE Y., IEEE Solid State Silicon Circuits Conf., Digest of Tech. Papers, 1985, p. 250.
33. EMA, T., KAWANAGO, S., NISHI, T., YOSHIDA, S., NISHIBE, H., YABU, T., KODAMA, Y., NAKANO, T. & TAGUCHI, M., IEDM Tech. Digest, (1988) 592.
34. KOMIJAMA, S., SAEKI, T., MOI, K. & NUMASAWA, Y., IEDM Tech. Digest, (1991) 827.
35. SANDLER, N. P., Lam Research Corp., private communications.
36. MENZ, K. D., BRAUN, R., HENKEL, W., HUBER, R., NEUREITHER, B., SPINDLER, O. & TREICHEL, H., In Proc. 7th VMIC Conf., Santa Clara, USA. IEEE, 1990, p. 384.