Control of defect structures in CuGaSe2 epitaxial films

Materials Research Society Symposium - Proceedings

Volumn 399, Issue , 1996, Pages 491-496

  Chen, Wei ^a   Gu, Gin Lern ^a   Tseng, Bae Heng ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; MICROSTRUCTURE; PHOTOLUMINESCENCE; POINT DEFECTS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

ANNIHILATE THREADING DISLOCATIONS; ANTI PHASE DOMAIN BOUNDARIES; ANTISITE DEFECTS; COPPER GALLIUM SELENIDE; DEFECT STRUCTURE; DONOR TO ACCEPTOR TRANSITIONS;

SEMICONDUCTING FILMS;

EID: 0029713740     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)