GaAs-on-Ge heteroepitaxy by atomic hydrogen-assisted molecular beam epitaxy (H-MBE)

Materials Research Society Symposium - Proceedings

Volumn 399, Issue , 1996, Pages 203-206

  Okada, Yoshitaka ^a   Harris Jr , James S ^a   Sutoh, Atsushi ^a   Kawabe, Mitsuo ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; EPITAXIAL GROWTH; HYDROGEN; IRRADIATION; MOLECULAR BEAM EPITAXY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GERMANIUM; SURFACE ACTIVE AGENTS;

ATOMIC HYDROGEN ASSISTED MOLECULAR BEAM EPITAXY; ATOMIC SCALE; ENERGETICS OF THE GROWTH; HETEROEPITAXY; LAYER BY LAYER TWO DIMENSIONAL GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029713732     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)