Effect of substrate misorientation on the evolution of surface morphology in epitaxially grown CaF2/Si(111) heterostructures

Materials Research Society Symposium - Proceedings

Volumn 399, Issue , 1996, Pages 177-182

  Kim, B M ^a   Soss, S R ^a   Overney, R M ^a   Schowalter, L J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCIUM COMPOUNDS; CRACK PROPAGATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SURFACES;

CALCIUM FLUORIDE; DEGREE OF MISCUT; LATERAL PROPAGATION; LATTICE MISMATCH; SUBSTRATE MISORIENTATION;

HETEROJUNCTIONS;

EID: 0029713489     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)