Data retention times in SOI-DRAMs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 126-127

  Kim, Hyoung Sub ^a   Choi, Dong Uk ^a   Lee, Sang Hoon ^a   Lee, Seung Kuk ^a   Park, Jae Kwan ^a   Kim, Ki Nam ^a   Park, Jong Woo ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); ION IMPLANTATION; LEAKAGE CURRENTS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

BULK SILICON DYNAMIC RANDOM ACCESS STORAGE; CHANNEL DOPING STRUCTURE; DATA RETENTION TIMES; DYNAMIC RANDOM ACCESS STORAGE; FLOATING BODY EFFECTS;

RANDOM ACCESS STORAGE;

EID: 0029713483     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)