Novel salicide technology using Ti hydrogenation for 0.1-μm CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 16-17

  Ando, K ^a   Matsubara, Y ^a   Ishigami, T ^a   Horiuchi, T ^a   Nishimoto, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRIC RESISTANCE; HYDROGENATION; INTEGRATED CIRCUIT MANUFACTURE; SILICON COMPOUNDS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

LINE WIDTH; NITRIDATION REACTION; RAPID THERMAL HYDROGENATION; SALICIDE TECHNOLOGY; SILICIDATION REACTION; TITANIUM SALICIDE;

CMOS INTEGRATED CIRCUITS;

EID: 0029713414     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)