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Volumn , Issue , 1996, Pages 76-77
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High-reliability interconnects using Cu-Zr alloy for future LSI's
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ANNEALING;
CHEMICAL VAPOR DEPOSITION;
COPPER ALLOYS;
ELECTRIC CONDUCTIVITY;
ELECTRIC RESISTANCE;
ELECTROMIGRATION;
GRAIN BOUNDARIES;
LSI CIRCUITS;
MAGNETRON SPUTTERING;
SECONDARY ION MASS SPECTROMETRY;
X RAY DIFFRACTION ANALYSIS;
ELECTROMIGRATION DAMAGE;
TEMPERATURE COEFFICIENTS OF RESISTANCE;
ELECTRIC CONNECTORS;
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EID: 0029713071
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (6)
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