Intersubband photocurrent from double barrier resonant tunneling structures

Superlattices and Microstructures

Volumn 19, Issue 4, 1996, Pages 375-382

  Mermelstein, C ^a   Sa'ar, A ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; INDUCED CURRENTS; INFRARED DETECTORS; PHOTONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

INFRARED LIGHT; INTERSUBBAND PHOTOCURRENT SPECTROSCOPY; NEGATIVE DIFFERENTIAL RESISTANCE; PHOTOINDUCED CURRENTS; PHOTON ASSISTED TUNNELING PROCESS; RESONANT TUNNELING DIODES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029712787     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0041     Document Type: Article

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