Design and performance of SOI pass transistors for 1Gbit DRAMs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 128-129

  Hu, Yin ^a   Teng, Clarence W ^a   Houston, Ted W ^a   Joyner, Keith ^a   Aton, Tom J ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHARGE TRANSFER; DEGRADATION; EFFICIENCY; ELECTRIC CHARGE; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; OXIDES; RANDOM ACCESS STORAGE; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

CELL DISCHARGING CHARACTERISTICS; CELL RETENTION TIME; CHARGING EFFICIENCY; DYNAMIC RANDOM ACCESS MEMORIES; FLOATING BODY EFFECT; GATE OXIDE; OFF STATE LEAKAGE; PASS TRANSISTORS; SIMOS SUBSTRATES; WORD LINE VOLTAGE;

MOSFET DEVICES;

EID: 0029712753     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)