Polarization insensitive interferometric wavelength converter with tensile strained InGaAs/InGaAsP MQW structure

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 230-233

  Schilling, M ^a   Wiedemann, P ^a   Daub, K ^a   Idler, W ^a   Klenk, M ^a   Koerner, U ^a   Lach, E ^a   Laube, G ^a   Wuenstel, K ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TENSILE PROPERTIES;

MACH-ZEHNDER INTERFEROMETER; MONOLITHIC WAVELENGTH CONVERTER; MULTIPLE QUANTUM WELLS (MQW); POLARIZATION SENSITIVITY; TENSILE STRAIN;

INTERFEROMETERS;

EID: 0029712475     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)