Optically detected impurity D0 and D- transitions in GaAs quantum wells

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 93-96

  Kono, J ^a   Lee, S T ^a   Salib, M S ^a   Herold, G S ^a   Petrou, A ^a   McCombe, B D ^a  

^a UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE LASERS; CRYSTAL IMPURITIES; ELECTRON CYCLOTRON RESONANCE; ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; IONS; MAGNETOOPTICAL EFFECTS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

FAR INFRARED MAGNETO SPECTROSCOPY; FARADAY GEOMETRY; INTRA EXCITONIC RESONANCES; OPTICAL DETECTION; OPTICALLY DETECTED RESONANCES;

ELECTRON TRANSITIONS;

EID: 0029711817     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00220-0     Document Type: Article

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