SCOPUS 정보 검색 플랫폼

Volumn 40, Issue 1-8, 1996, Pages 395-398

Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs

(8) De Keyser, A a Bogaerts, R a Karavolas, V C b Van Bockstal, L a Herlach, F a Peeters, F M b Van De Graaf, W c Borghs, G c

a UNIVERSITY OF LEUVEN (Belgium)

b UNIVERSITY OF ANTWERP (Belgium)

c IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; EPITAXIAL GROWTH; HALL EFFECT; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; THREE DIMENSIONAL;

CONDUCTION CHANNEL; ELECTRON GAS; MAGNETIC FREEZE OUT; MAGNETOTRANSPORT PHENOMENA; TWO DIMENSIONAL;

CHARGE CARRIERS;

EID: 0029711175 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(96)84617-X Document Type: Article

Times cited : (2)

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