Intersubband Raman scattering in InAs/AlSb quantum wells

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 281-285

  Wagner, J ^a   Schmitz, J ^a   Richards, D ^b   Ralston, J D ^a,c   Koidl, P ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c SDL INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRONS; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; PHONONS; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

ALUMINUM ANTIMONIDE; INDIUM ARSENIDE; INTERSUBBAND RAMAN SCATTERING; OPTICAL EXCITATION INTENSITY; OPTICAL PHONON INTERSUBBAND PLASMON MODES; RAMAN MEASUREMENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029711171     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00265-0     Document Type: Article

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