Pyramidal quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 799-802

  Fukui, T ^a   Kumakura, K ^a   Nakakoshi, K ^a   Motohisa, J ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

FOUR FOLD SYMMETRIC FACET SIDE WALLS; PYRAMIDS; SELF LIMITED GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029711022     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00365-7     Document Type: Article

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