Effect of DMOS cell geometry on the integrated current sensors of high-voltage power MOSFETs

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 189-192

  Zhu, R H ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; SENSORS;

ATOMIC LATTICE LAYOUT; CELL GEOMETRY; INTEGRATED CURRENT SENSORS;

MOSFET DEVICES;

EID: 0029710848     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)