Novel design techniques for high-linearity MOSFET-only switched-capacitor circuits

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 1996, Pages 152-153

  Yoshizawa, Hirokazu ^a   Temes, Gabor C ^a   Ferguson Jr , Paul ^a   Krummenacher, Francois ^a  

^a OREGON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; FUNCTIONS; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; OXIDES; SWITCHING CIRCUITS;

CAPACITANCE VOLTAGE RELATION; DIGITAL CMOS PROCESS; SWITCHED CAPACITOR CIRCUITS;

CAPACITORS;

EID: 0029709520     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)