Large-signal HEMT modelling, specifically optimized for InP based HEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 638-641

  Schreurs, D ^a   Baeyens, Y ^a   van der Zanden, K ^a   Verspecht, J ^a   Van Hove, M ^a   De Raedt, W ^a   Nauwelaers, B ^a   Van Rossum, M ^a  

^a Katholieke Universitetit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

LARGE SIGNAL HIGH ELECTRON MOBILITY TRANSISTOR MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029709454     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)