Composition variation of InGaAsP grown on (111)B faceted V-groove InP substrates by gas source molecular beam epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 511-514

  Wang, J ^a   Thompson, D A ^a   Robinson, B J ^a   Simmons, J G ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

ENERGY DISPERSIVE X RAY ANALYSIS; GAS SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0029709450     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)