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Volumn 396, Issue , 1996, Pages 801-806
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Cavity nucleation and evolution in He-implanted Si and GaAs
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL DEFECTS;
DISLOCATIONS (CRYSTALS);
HELIUM;
ION IMPLANTATION;
NUCLEATION;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
CAVITY LAYERS;
EXFOLIATION;
HELIUM ION IMPLANTATION;
PLANAR DEFECTS;
CAVITY RESONATORS;
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EID: 0029709234
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
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References (12)
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