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Volumn 396, Issue , 1996, Pages 801-806

Cavity nucleation and evolution in He-implanted Si and GaAs

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); HELIUM; ION IMPLANTATION; NUCLEATION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

EID: 0029709234     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (12)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.