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Volumn , Issue , 1996, Pages 478-481
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LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
ENERGY GAP;
FILM GROWTH;
METALLORGANIC VAPOR PHASE EPITAXY;
NITROGEN;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
CARRIER GAS;
LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING FILMS;
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EID: 0029708956
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (2)
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References (3)
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