Anisotropy of electrical resistivity and hole mobility in InTe single crystals

Crystal Research and Technology

Volumn 31, Issue 5, 1996, Pages 673-678

  Parlak, M ^a   Ercelebi C ^a   Gunal I ^a   Ozkan H ^a   Gasanly, N M ^a,b  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b BAKU STATE UNIVERSITY   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; CHEMICAL BONDS; CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; PHONONS; SINGLE CRYSTALS; STACKING FAULTS; THERMAL EFFECTS;

HOLE MOBILITY; INTERCHAIN BONDING; TEMPERATURE DEPENDENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0029708949     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.2170310525     Document Type: Article

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