Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 601-604

  Lipsanen, H ^a   Sopanen, M ^a   Ahopelto, J ^b  

^a AALTO UNIVERSITY   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; OPTICAL VARIABLES MEASUREMENT; OPTIMIZATION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; STRAIN;

EXCITATION INTENSITY; EXCITED STATE TRANSITIONS; GROUND STATE TRANSITION; PHOTOLUMINESCENCE EFFICIENCY; PHOTOLUMINESCENCE MEASUREMENTS; SELF ORGANIZED STRESSORS; STRAIN INDUCED CONFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029707392     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00372-X     Document Type: Article

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