Unique and physically meaningful extraction of the bias-dependent series resistors of a 0.15 μm PHEMT demands extremely broadband and highly accurate measurements

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1996, Pages 1715-1718

  Novotny, M ^a   Kompa, G ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; PARAMETER ESTIMATION; RESISTORS; SEMICONDUCTOR DEVICE MODELS;

BIAS DEPENDENT SERIES RESISTORS; MEASUREMENT UNCERTAINTIES; PARAMETER EXTRACTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029707033     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)