2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT)

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 299-302

  Takahashi, Yoshikazu ^a   Yoshikawa, Koh ^a   Soutome, Masayuki ^a   Fujii, Takeshi ^a   Ichijyou, Masami ^a   Seki, Yasukazu ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES;

INSULATED GATE BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0029706469     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)