Irradiation-induced damage and intermixing of GaAs-AlGaAs quantum wells

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 823-827

  Tan, H H ^a   Williams, J S ^a   Jagadish, C ^a   Burke, P T ^a   Gal, M ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY SHIFTS; INTERMIXING; IRRADIATION DAMAGE; LOW TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY; SATURATION EFFECT;

ANNEALING; CRYSTAL DEFECTS; ELECTROMAGNETIC WAVE ABSORPTION; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIXING; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029705616     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)