Growth of vacancy clusters during post-irradiation annealing of ion implanted silicon

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 155-160

  van Veen, A ^a   Schut, H ^a   Rivera, A ^a   Fedorov, A V ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CALCULATIONS; COMPUTER SIMULATION; CRYSTAL DEFECTS; DEUTERIUM; DISSOCIATION; ION BEAMS; ION IMPLANTATION; MONTE CARLO METHODS; THERMAL EFFECTS;

DEFECT EVOLUTION; POSITRON BEAM ANALYSIS; STILLINGER WEBER POTENTIAL; VACANCY; VACANCY CLUSTER DISSOCIATION ENERGY;

SILICON;

EID: 0029705604     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)