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Volumn 60, Issue 3, 1996, Pages 17-28
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Epitaxial growth of I-III-VI chalcopyrite-type semiconductor single-crystals by halogen transport method and characterization by reflection electron diffraction
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NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARACTERIZATION;
COPPER COMPOUNDS;
CRYSTAL GROWTH;
CRYSTAL ORIENTATION;
CRYSTAL STRUCTURE;
EPITAXIAL GROWTH;
HALOGEN COMPOUNDS;
RAMAN SCATTERING;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SINGLE CRYSTALS;
TRANSPORT PROPERTIES;
CHALCOPYRITE;
COPPER GALLIUM SELENIDE;
COPPER GALLIUM SULFIDE;
COPPER INDIUM SELENIDE;
COPPER INDIUM SULFIDE;
HALOGEN TRANSPORT METHOD;
MINIMUM LATTICE MISMATCH;
SEMICONDUCTOR SINGLE CRYSTALS;
TWIN STRUCTURE;
ZINCBLENDE TYPE SUBSTRATE;
SEMICONDUCTOR MATERIALS;
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EID: 0029705206
PISSN: 03669092
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (1)
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References (6)
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