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Volumn 40, Issue 1-8, 1996, Pages 59-62

Intersubband lifetimes in Si/SiGe quantum wells

(10) Heiss, W a Gornik, E a Pidgeon, C R b Lee, S C b Galbraith, I b Murdin, B c Langerak, C J G M c Helm, M d Hertle, H e Schaffler F f

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

b HERIOT WATT UNIVERSITY (United Kingdom)

c FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN (Netherlands)

d JOHANNES KEPLER UNIVERSITY LINZ (Austria)

e WALTER SCHOTTKY INSTITUT (Germany)

f DAIMLER AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON SCATTERING; ELECTRON TRANSITIONS; FREE ELECTRON LASERS; MOLECULAR BEAM EPITAXY; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

FAR INFRARED PICOSECOND FREE ELECTRON LASER SOURCE; INTERSUBBAND LIFETIMES; OPTICAL PHONON INTERSUBBAND SCATTERING; SHEET DENSITY; TIME RESOLVED PUMP;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029703575 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00213-8 Document Type: Article

Times cited : (2)

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