Anti-stokes photoluminescence from Si modulation doped AlyGa1-yAs/AlxGa1-xAs QWand Si double delta doped AlxGa1-x As

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 665-671

  Junnarkar, M R ^a   Yamaguchi, E ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b IMRA Europe SAS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPOSITION; ELECTRONS; LIGHT ABSORPTION; LIGHT MODULATION; PHOTONS; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

ANTI STOKES PHOTOLUMINESCENCE; DOUBLE DELTA DOPED STRUCTURE; LARGE LATTICE RELAXATION MODELS; MODULATION DOPED MULTIPLE QUANTUM WELLS; MODULATION DOPED QUANTUM WELLS; PERSISTENT PHOTOCONDUCTIVE ELECTRONS; SMALL LATTICE RELAXATION MODELS; TWO DIMENSIONAL ELECTRON GAS;

PHOTOLUMINESCENCE;

EID: 0029703378     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00383-5     Document Type: Article

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