Long data retention SOI-DRAM with the body refresh function

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 1996, Pages 198-199

  Tomishima, Shigeki ^a   Morishita, Fukashi ^a   Tsukude, Masaki ^a   Yamagata, Tadato ^a   Arimoto, Kazutami ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT THEORY; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ESTIMATION; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

DYNAMIC DATA RETENTION CHARACTERISTICS; JUNCTION LEAKAGE; TWO DIMENSIONAL DEVICE SIMULATOR;

RANDOM ACCESS STORAGE;

EID: 0029703315     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)