Effects of coulomb interaction in the magneto-capacitance of quantum wires

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 311-314

  Govorov, A O ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CRYSTALS; ELECTRONS; ELECTROSTATICS; HALL EFFECT; MAGNETIC PROPERTIES; PHASE TRANSITIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EFFECT OF COULOMB INTERACTION; GATE VOLTAGE DEPENDENCE; INTER DIGITATED METALLIC GATE; MAGNETO CAPACITANCE; WIGNER CRYSTAL REGIME;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0029703127     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00318-5     Document Type: Article

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