The effect of resonant sublevel coupling on intersubband transitions in coupled double quantum wells

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 113-115

  Hartung, M ^a   Wixforth, A ^a   Campman, K L ^b   Gossard, A C ^b  

^a UNIVERSITY OF MUNICH   (Germany)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRODES; ELECTRONS; EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

ELECTRON SYSTEMS; FAR INFRARED SPECTROSCOPY; GATE ELECTRODES; INTERSUBBAND TRANSITIONS; MAGNETOCAPACITANCE MEASUREMENT; TUNNEL BARRIERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029703124     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00228-6     Document Type: Article

References (4)

1. A. Wixforth, M. Kalondis, C. Rocke, K. Ensslin, M. Sunderam, J. H. English and A. C. Gossard, Semicond. Sci. Technol. 9, 215 (1994).
2. M. Zaluzny, Appl. Phys. Lett. 65, 1817 (1994).
3. G. S. Boebinger, L. N. Pfeiffer and K. W. West, Phys. Rev. B45, 11,391 (1992).
4. J. Faist, F. Capasso, A. L. Hutchinson, L. Pfeiffer and K. N. West, Phys. Rev. Lett. 71, 3573 (1994).