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Volumn 399, Issue , 1996, Pages 437-442
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Strain relaxation in GaAs on Si by two groups of misfit dislocations
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CHARACTERIZATION;
CRYSTAL LATTICES;
DISLOCATIONS (CRYSTALS);
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
STRESS RELAXATION;
STRESSES;
TRANSMISSION ELECTRON MICROSCOPY;
FILM THICKNESS EFFECT;
LATTICE MISFIT;
MISFIT DISLOCATION;
STRAIN RELAXATION;
THERMAL EXPANSION MISFIT INDUCED STRESS;
SEMICONDUCTING FILMS;
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EID: 0029703064
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (13)
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