Comparison of hot-electron and Fowler-Nordheim characterization of charging events in a 0.5-μm CMOS technology

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1996, Pages 164-167

  Hook, T B ^a   Watson, K ^a   Mittl, S ^a   Johnson, C ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTENNAS; CMOS INTEGRATED CIRCUITS; DEFECTS; ELECTRIC CHARGE; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS;

FOWLER-NORDHEIM STRESS; INSULATOR DEPOSITION; INTERLEVEL DIELECTRIC SECTORS; LATENT DAMAGE; MOBILITY DEGRADATION; PLASMA CHARGING; THRESHOLD VOLTAGE SHIFT;

PLASMA ETCHING;

EID: 0029702410     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)