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Volumn 399, Issue , 1996, Pages 455-460
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Reciprocal space analysis of the initial stages of strain relaxation in SiGe epilayers
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL STRUCTURE;
DISLOCATIONS (CRYSTALS);
ETCHING;
MOLECULAR BEAM EPITAXY;
MONITORING;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
STRESS RELAXATION;
X RAY DIFFRACTION ANALYSIS;
DIFFUSE X RAY INTENSITY;
DIFFUSE X RAY SCATTERING PATTERN;
DISPLACEMENT FIELDS;
GEOMETRY MODEL;
LINEAL MISFIT DENSITY;
MISFIT DENSITY;
PARTIAL RELAXATION;
X RAY DIFFRACTION RECIPROCAL SPACE ANALYSIS;
SEMICONDUCTING FILMS;
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EID: 0029702096
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (8)
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References (5)
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