High performance CMOS for GHz communication IC

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 134-135

  Tanabe, A ^a   Togo, M ^a   Soda, M ^a   Tezuka, H ^a   Suzaki, T ^a   Furakawa, A ^a   Emura, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; MOSFET DEVICES; OPTICAL COMMUNICATION;

GATE ELECTRODE RESISTANCE; GATE SHEET RESISTANCE; INTRINSIC CAPACITANCE; JUNCTION CAPACITANCE; LOCALIZED CHANNEL IMPLANT TECHNIQUE; RING OSCILLATOR DELAY TIME;

CMOS INTEGRATED CIRCUITS;

EID: 0029701839     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)