Level crossing of nanometer sized InAs islands in GaAs

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 367-371

  Kowalski, B ^a   Omling, P ^a   Miller, M S ^a   Jeppesen, S ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; CHEMICAL BEAM EPITAXY; ELECTRON SPECTROSCOPY; EXCITONS; LIGHT POLARIZATION; MAGNETIC FIELDS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

INDIUM ARSENIDE; LEVEL CROSSINGS; POLARIZATION SPECTROSCOPY; QUANTUM CONFINEMENT; TERTIARY BUTYL ARSINE; TRIETHYLGALLIUM; TRIMETHYL INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029701680     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00330-4     Document Type: Article

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