Two-stage drain leakage degradation in sub-micron MOSFET technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 164-165

  Frommer, A ^a   Pinto, M R ^a   Bude, J D ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC RESISTANCE; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

BAND TO BAND TUNNELING; GATE INDUCED DRAIN LEAKAGE CURRENT; TIME DEPENDENCE; TRAP ASSISTED TUNNELING; TWO STAGE DEGRADATION PROCESS;

MOSFET DEVICES;

EID: 0029701429     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)