New CVD tungsten nitride diffusion barrier for Cu interconnection

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 46-47

  Sun, S C ^a   Tsai, M H ^a   Chiu, H T ^a   Chuang, S H ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC CONDUCTIVITY; ELECTRIC CONNECTORS; LEAKAGE CURRENTS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR STRUCTURE; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; THERMODYNAMIC STABILITY; VAPORIZATION;

BIAS THERMAL STRESS; DIFFUSION BARRIER; TUNGSTEN NITRIDE;

TUNGSTEN COMPOUNDS;

EID: 0029701417     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)