Ultrafast electron and hole trapping times and defect band saturation dynamics in low-temperature-grown GaAs

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn , Issue , 1996, Pages 454-

  Sung, C Y ^a   Wang, H H ^a   Norris, T B ^a   Whitaker, J F ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; DEFECTS; ELECTRONS; LIGHT ABSORPTION; LOW TEMPERATURE PROPERTIES; SAPPHIRE; TITANIUM;

CARRIER RECOMBINATION TIME; HOLE TRAPPING TIMES; TWO WAVELENGTH TRANSMISSION PUMP PROBE TECHNIQUE; ULTRAFAST ELECTRON TIMES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029701172     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)