High-speed low-power 0.3μm CMOS gate array with variable threshold voltage (VT) scheme

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 1996, Pages 53-56

  Kuroda, Tadahiro ^a   Fujita, Tetsuya ^a   Nagamatu, Tetsu ^a   Yoshioka, Shinichi ^a   Sei, Toshikazu ^a   Matsuo, Kenji ^a   Hamura, Yoichiro ^a   Mori, Toshiaki ^a   Murota, Masayuki ^a   Kakumu, Masakazu ^a   Sakurai, Takayasu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER SUPPLIES TO APPARATUS; INTEGRATED CIRCUIT MANUFACTURE; MOS DEVICES; SEMICONDUCTOR SWITCHES;

CIRCUIT TECHNIQUES; GATE ARRAY; POWER DISSIPATION; STANDBY POWER; VARIABLE THRESHOLD VOLTAGE SCHEME;

APPLICATION SPECIFIC INTEGRATED CIRCUITS;

EID: 0029700814     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)