Temperature-dependent strain relaxation and islanding of Ge/Si(111)

Materials Research Society Symposium - Proceedings

Volumn 399, Issue , 1996, Pages 295-300

  Deelman, P W ^a   Schowalter, L J ^a   Thundat, T ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NUCLEATION; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRESS RELAXATION; THERMAL EFFECTS; THERMODYNAMICS;

CLUSTERING; ISLANDING; QUANTUM CONFINEMENT EFFECTS; STRAIN RELAXATION;

SEMICONDUCTING FILMS;

EID: 0029700805     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)