Thermal reliability of power insulated gate bipolar transistor (IGBT) modules

Annual IEEE Semiconductor Thermal Measurement and Management Symposium

Volumn , Issue , 1996, Pages 136-143

  Wu, Wu,chen ^a   Gao, Guo ^a   Dong, Limin ^a   Wang, Zhengyuan ^a   Held, Marcel ^a   Jacob, Peter ^a   Scacco, Paolo ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING (DEFORMATION); COMPUTER SIMULATION; CRACKS; ELECTRON DEVICE MANUFACTURE; ELECTRON DEVICE TESTING; ELECTRONICS PACKAGING; FATIGUE OF MATERIALS; RELIABILITY; SOLDERING ALLOYS; STRESS CONCENTRATION; THERMAL CYCLING; THERMAL STRESS;

POWER INSULATED GATE BIPOLAR TRANSISTOR MODULES; SOLDER FATIGUE; STATIC INDUCTION THYRISTORS; THERMAL RELIABILITY;

BIPOLAR TRANSISTORS;

EID: 0029700442     PISSN: 10652221     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)