Electron shading effect during plasma process

Fujitsu Scientific and Technical Journal

Volumn 32, Issue 1, 1996, Pages 136-141

  Arimoto, Hiroshi ^a,b,c,d   Kamata, Takeshi ^c,d,e   Hashimoto, Koichi ^c,f,g  

^a WASEDA UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

^d JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^e KEIO UNIVERSITY   (Japan)

^f UNIVERSITY OF TOKYO   (Japan)

^g Japan Society

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; FABRICATION; PLASMA ETCHING; THERMAL EFFECTS;

CHARGE BUILD-UP; HIGH-ASPECT-RATIO PATTERNS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0029699985     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. Morimoto, T., Takahashi, C., and Matsuo, S.: The Influence of Incident Angle Distributions of Plasma Particles on the Etched Profiles of Silicon Films. Proc. Symp. on DryProcess, pp.57-62 (1991).
2. Fujiwara, N., Maruyama, T., Yoneda, M., Tsukamoto, K., and Banjo, T.: Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma. Jpn. J. Appl. Phys, 33, 4B, pp.2164-2169 (1994).
3. Nozawa, T., Kinoshita, T., Nishizuka, T., Narai, A., Inoue, T., and Nakaue, A.: The Electron Charging Effects of Plasma on Notch Profile Defects. Proc. on DryProcess, pp.37-41 (1994).
4. Hashimoto, K.: Charge Damage Caused by Electron Shading Effect. Jpn. J. Appl. Phys., 33, 10, pp.6013-6018 (1994).
5. Ingram, S. G.: The Influence of Substrate Topography on Ion Bombardment in Plasma Etching. J. Appl. Phys., 68, 2, pp.500-504 (1990).
6. Arnold, J. C. and Sawin, H. H.: Charging of Pattern Features during Plasma Etching. J. Appl. Phys., 70, 10, pp.5314-5317 (1991).
7. Arimoto, H., Kamata, T., and Horiuchi, K.: Electron and Ion Current from Ar Plasma into Si Substrate Covered with Line-Patterned SiO2 Film. Digest of the 8th Int. MicroProcess Conference, pp.148-149 (1995).
8. Kamata, T. and Arimoto, H.: to be published in J. Appl. Phys.
9. Hashimoto, K., Kamata, T., and Arimoto, H.: Gate Oxide Charging Induced by Electron Shading Effect. Digest of the 8th Int. MicroProcess Conference, pp.146-148 (1995).
10. Hashimoto, K.: New Phenomena of Charge Damage in Plasma Etching:Heavy Damage Only through Dense-Line Antenna. Jpn. J. Appl. Phys., 32, 12B, pp.6109-6113 (1993).