MeV ion induced damages and their annealing behavior in silicon

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 781-786

  Cho, Nam Hoon ^a   Jang, Ki Wan ^a   Lee, Jeong Yong ^a   Ro, Jae Sang ^a  

^a Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; BORON; CRYSTAL DEFECTS; PHOSPHORUS; RADIATION EFFECTS; SEMICONDUCTING SILICON; STRAIN; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ION ENERGY; ION INDUCED DAMAGE; SECONDARY DEFECT FORMATION; STRAIN RELAXATION;

ION IMPLANTATION;

EID: 0029699631     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)