Gate material dependence of process charging damage in thin gate oxide

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1996, Pages 160-163

  Acovic, A ^a   Ray, A ^a   Sun, J ^a   Herman, J ^a   Furukawa, T ^a   Geiger, R ^a   Beyer, K ^a   McGahay, V ^a   Greco, S ^a   Abadeer, W ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; CAPACITORS; CMOS INTEGRATED CIRCUITS; DIELECTRIC PROPERTIES; EFFECTS; ELECTRIC CHARGE; FIELD EFFECT TRANSISTORS; ION IMPLANTATION; LEAKAGE CURRENTS; OXIDES; REACTIVE ION ETCHING; SEMICONDUCTING SILICON;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA INDUCED CHARGING; PLASMA INDUCED DAMAGE; THIN GATE OXIDE;

PLASMA ETCHING;

EID: 0029699062     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)