Novel low-profile power module aimed at high-frequency applications

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 321-324

  Shinohara, S ^a   Suzuki, T ^a   Tanino, K ^a   Kobayashi, H ^a   Hasegawa, Y ^a  

^a Origin Electric Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC PROPERTIES; ELECTRONICS PACKAGING; HEAT RESISTANCE; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; SUBSTRATES; THERMODYNAMIC PROPERTIES;

ALUMINUM NITRIDE; HIGH FREQUENCY APPLICATIONS; LOW PROFILE POWER MODULES;

POWER ELECTRONICS;

EID: 0029699005     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)