Vibrational and electronic transition in InAs quantum dots formed by sequential implantation of In and As in a-SiO2

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 441-446

  Ueda, A ^a   Henderson, D O ^a   Mu, R ^a   Tung, Y S ^a   Hall, C ^a   Zhu, Jane G ^a   White, C W ^a   Zuhr, R A ^a  

^a FISK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; INDIUM; INFRARED SPECTROSCOPY; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; STRUCTURE (COMPOSITION); THERMODYNAMIC PROPERTIES;

ELECTRONIC TRANSITION; INDIUM ARSENIDE; SEQUENTIAL ION IMPLANTATION; VIBRATIONAL TRANSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029698882     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)