Monolithic mode locked DBR laser with multiple-bandgap MQW structure realized by selective area growth

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 165-168

  Schilling, M ^a   Bouayad Amine, J ^a   Feeser, T ^a   Haisch, H ^a   Kuehn, E ^a   Lach, E ^a   Satzke, K ^a   Weber, J ^a   Zielinski, E ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; LASER MODE LOCKING; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ELECTROABSORPTION MODULATOR; MULTIPLE SEGMENT PULSE LASER SOURCES; SELECTIVE AREA GROWTH (SAG); SINUSOIDAL VOLTAGE;

SEMICONDUCTOR LASERS;

EID: 0029698494     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)