Novel body-tied silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode

ETRI Journal

Volumn 17, Issue 4, 1996, Pages 1-12

  Kang, Won Gu ^a   Lyu, Jong Son ^a   Yoo, Hyung Joun ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; GROUNDING ELECTRODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

BODY TIED SILICON ON INSULATOR FIELD EFFECT TRANSISTOR; DRAIN CURRENT; INTERFACE TRAP DENSITY;

MOSFET DEVICES;

EID: 0029698330     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.96.0196.0041     Document Type: Article

References (18)